PDC4960X mosfets equivalent, n-channel mosfets.
* 40V, 100A, RDS(ON) =2.8mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* Green Device Available
Applications
* MB / VGA / Vcore
* POL.
PPAK5x6 Pin Configuration
DDDD
S S SG
G
D S
BVDSS 40V
RDSON 2.8m
ID 100A
Features
* 40V, 100A, RDS(ON) =2.
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
Image gallery
Download